| Project Detail |
The current semiconductor market – dominated by field effect transistors (FETs) is valued at $607.40 billion per year (projected to reach $980.80 billion by 2029). A significant portion of this market involves applications such as in high-performance sensing/detection. FETs based on atomically thin body (ATB) semiconductors such as molybdenum disulphide (MoS2) have tremendous potential for ultra-sensitive sensors and detectors in the near term. FETs for these applications can be integrated in back end of the line (BEOL) processes where the materials and integration requirements are less stringent – compared to FETs for processor chips. However, commercialization of MoS2 FETs has been slowed by the lack of stable and reproducible device operation that gives rise to poor signal to noise ratios. This has led to poor scalability, difficulty in achieving consistent electrical characteristics, and integration challenges with existing technology which has hindered the widespread adoption of MoS2 FETs for sensing and detection. Therefore, there is an urgent need to overcome these challenges to realize the full market potential of MoS2 FETs. Research supported by the PI’s ERC Advanced Grant has led to a transformative breakthrough in developing a high quality zirconium dioxide (ZrO2) dielectric that forms an utra-clean interface with MoS2 so that highly stable and consistent FETs can be realised. This discovery has demonstrated the feasibility of high-performance, reliable MoS2 FETs with the potential for industrial-scale production – which has the potential for revolutionise the sensor/detection FETs market. This Proof of Concept aims to take the necessary commercial and technical steps to bring this innovation to market: demonstrate wafer-scale fabrication of MoS2 /ZrO2 FETs, validate their high performance, conduct a critical market assessment to develop a business plan, and engage with industry and end-users to establish a clear route to commercialization. |
