Project Notice |
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| PNR | 64818 |
| Project Name | Ultrawide-Bandgap Semiconductors for Extrinsic Photoconductive Switching Devices |
| Project Detail | Texas Tech University is developing a photoconductive semiconductor switching device from ultrawide-bandgap materials that would enable improved control of the grid. The ultrawide-bandgap semiconductors used in the device—hexagonal boron nitride and aluminum nitride—support higher voltage and current than legacy semiconductor materials. Texas Tech’s device seeks to enable efficient high-power and high-speed power electronics converters for a smarter grid. |
| Funded By | Self-Funded |
| Sector | Energy & Power |
| Country | United States , Northern America |
| Project Value | USD 3,070,735 |
Contact Information |
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| Company Name | Texas Tech University |
| Web Site | https://arpa-e.energy.gov/technologies/projects/ultrawide-bandgap-semiconductors-extrinsic-photoconductive-switching-devices |
