| Project Detail |
Infrared photon harvesting using plasmonic nanocrystals and 2D semiconductor junction
Harvesting infrared (IR) light at wavelengths exceeding 1000 nm is vital for improving photovoltaic and photoelectric devices, as well as imaging and communication technologies, without using heavy metals. With the support of the Marie Sklodowska-Curie Actions programme the INFRALIGHT project aims to pioneer this approach by creating a Schottky junction between semiconducting fluorographene and heavy metal-free doped metal oxide nanocrystals (e.g. Sn:In2O3) to efficiently capture infrared light. This junction enables efficient charge transfer under infrared excitation. The resultant device will show an enhanced near-infrared (NIR) photoresponse through the extraction of plasmon hot electrons from IR hotspot plasmons. INFRALIGHT will focus on developing this device and exploring the interaction of IR plasmons with 2D semiconductors.
Harvesting infrared light, specifically wavelengths above 1000 nm, is of paramount importance for enhancing photovoltaic and photoelectric efficiencies, as well as for applications in imaging and communication. In recent years, significant strides have been made in the realm of infrared optoelectronics, leveraging colloidal quantum dots (0D materials) as a cost-effective alternative to conventional semiconductor technologies like InGaAs, InSb, HgCdTe, and others. Nevertheless, prevailing infrared technologies often rely on toxic compounds such as lead, cadmium, and mercury chalcogenide, giving rise to significant environmental concerns. Recently, heavy metal-free doped metal oxide nanocrystals (NCs), exemplified by Sn-doped In2O3 (ITO), have garnered recognition in the fields of nanoelectronics and energy storage owing to their alluring optical and electronic properties. The integration of plasmonic nanomaterials into semiconductor matrices holds great promise in diverse areas, including solar energy harvesting, photocatalysis, and photodetection. However, their application in the infrared spectrum alongside semiconductors remains relatively underexplored. To address this gap, we introduce the INFRALIGHT project, which introduces a pioneering approach: the establishment of a dedicated Schottky junction between semiconducting fluorographene and heavy metal-free doped metal oxide nanocrystals (e.g. Sn@In2O3) to efficiently capture infrared light. This junction will facilitate efficient charge transfer when exposed to infrared excitation. Our subsequent objective is to demonstrate a proof-of-concept photodetector device operating at a self-bias voltage (0 V). This device will exhibit an enhanced near-infrared (NIR) photoresponse achieved through the photoinduced extraction of plasmon hot electrons from IR hotspot plasmons. Within the framework of INFRALIGHT, we will delve into device development and investigate the interaction of IR plasmons with 2D semiconductors. |
