Project Notice |
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| PNR | 63689 |
| Project Name | Diamond Optically Gated Junction Field Effect Transistor |
| Project Detail | Lawrence Livermore National Laboratory is developing a semiconductor transistor device to enable future grid control systems to accommodate higher voltage and current than conventional devices. The team seeks to build a high-power diamond optoelectronic device that has the inherent advantages of diamond’s superior properties relative to other wide- and ultrawide-bandgap semiconductor materials. Three of the proposed devices in series would be able to support more than 6 kilovolts, almost double that of existing wide-bandgap commercial options. |
| Funded By | Self-Funded |
| Sector | Energy & Power |
| Country | United States , Northern America |
| Project Value | USD 3,000,000 |
Contact Information |
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| Company Name | Lawrence Livermore National Laboratory (LLNL) |
| Web Site | https://arpa-e.energy.gov/technologies/projects/diamond-optically-gated-junction-field-effect-transistor |
