| Project Detail |
Georgia Institute of Technology is developing a semiconductor switching device from wide-bandgap III-Nitride material to improve grid control, resilience, and reliability. Georgia Tech’s switching device seeks to achieve remarkable current and power capabilities by utilizing carrier control phenomena which transport current through the entirety of the semiconductor volume, a capability distinct from conventional power transistor designs which channel current through narrow constrictions. If successful, the device would enable switching on nearly any transmission line using a single device, greatly reducing cost and complexity of building the future smart grid. |
