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United States Project Notice - Development Of Cubic Boron Nitride (C-BN) Ultrawide Bandgap Semiconductors


Project Notice

PNR 62565
Project Name Development of Cubic Boron Nitride (c-BN) Ultrawide Bandgap Semiconductors
Project Detail Texas Tech University will develop a novel method for producing electronic grade cubic boron nitride semiconductor wafers that could equip electronic devices to operate in extreme temperatures and conditions. The wafers—formed from microwave plasma chemical vapor deposition—would enable power devices that handle higher voltages and currents, furthering advancements in power distributions, electric transportation, nuclear energy, national security, health care, and material sciences.
Funded By Self-Funded
Sector Energy & Power
Country United States , Northern America
Project Value USD 500,000

Contact Information

Company Name Texas Tech University
Web Site https://arpa-e.energy.gov/technologies/projects/development-cubic-boron-nitride-c-bn-ultrawide-bandgap-semiconductors

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