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United States Project Notice - HVPE Grown Gan Conductive Substrates For Power Electronics


Project Notice

PNR 62329
Project Name HVPE Grown GaN Conductive Substrates for Power Electronics
Project Detail North Carolina State University will develop a method to fabricate electrically conductive thick gallium nitride crystals that could be used in the manufacturing of substrates for vertical gallium nitride semiconductors. North Carolina State University’s pristine semiconductor substrates—composed of a material that can operate at higher temperatures and withstand higher voltages than silicon—would enable more efficient power delivery, bringing higher currents and voltages within reach in power electronics.
Funded By Self-Funded
Sector Energy & Power
Country United States , Northern America
Project Value USD 476,190

Contact Information

Company Name North Carolina State University (NC State)
Address ARPA-E Program Director: Dr. Olga Spahn Project Contact: Prof. Ramon Collazo Press and General Inquiries Email: ARPA-E-Comms@hq.doe.gov Project Contact Email: rcollaz@ncsu.edu
Web Site https://arpa-e.energy.gov/technologies/projects/hvpe-grown-gan-conductive-substrates-power-electronics

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