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RIR Power Electronics, a global semiconductor company, is set to launch India’s first Silicon Carbide (SiC) semiconductor production facility in Odisha. The company plans to begin phase 1 production of epitaxy wafers by December 2025, marking a major milestone in Indias semiconductor manufacturing sector. With an investment of ?618 crore, the facility will focus on producing high-power SiC devices, including MOSFETs and diodes ranging from 3.3KV to 20KV. This initiative aligns with the governments Make in India vision, enhancing domestic semiconductor capabilities and reducing reliance on imports. We are proud to align with Odishas vision of fostering semiconductor manufacturing and innovation. With the support of the Odisha government, we are on track to begin production of Epitaxy Wafer by the end of this year and do the Packaging and SiC Fab in subsequent years, said Harshad Mehta, Founder & Promoter, RIR Power Electronics Limited. The upcoming SiC semiconductor facility will cater to critical industries such as electric vehicles, renewable energy, power electronics, and industrial automation. SiC technology offers higher efficiency, durability, and enhanced energy performance across various applications. Backed by government support and RIR’s expertise in power electronics, the facility is expected to strengthen India’s semiconductor supply chain, create employment opportunities, and drive regional economic growth, positioning the country as a key player in the global semiconductor industry. |
