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Toshiba has developed a 2,200 V silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) for inverters and energy storage systems, to help inverter manufacturers reduce size and the weight of your products.
Japanese electronics manufacturer Toshiba has introduced a new silicon carbide (SiC)-based metal-oxide-semiconductor field-effect transistor (MOSFET) for applications in solar inverters and battery storage systems.
According to the company, the new MOSFET can help inverter manufacturers reduce the size and weight of their products.
“Operating at higher frequencies allows the size and weight of other system components, such as heat sinks and filters, to be reduced,” the company says.
The new product houses a 2,200 V Schottky Barrier Diode (SBD) and is intended for use in two-level inverters in 1,500 V (DC) voltage systems. Two-level devices have fewer switching modules than three-level inverters, which results in smaller, lighter systems, according to the manufacturer.
SiC modules operate with low conduction losses and low turn-on voltage at the drain source. They also have lower on-off switching losses of 14 mJ and 11 mJ, respectively. Additionally, they feature low leakage inductance, low thermal resistance and an integrated thermistor. |
