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Japan Procurement News Notice - 35912


Procurement News Notice

PNN 35912
Work Detail Mitsubishi Electrics new 2.0 kV LV100 semiconductor device is based on its Insulated Gate Bipolar Transistor (IGBT) technology and cathode relaxed-field diodes. It is designed for industrial applications that need “intermediate” power converters between DC1500 V and 3.3 kV. The Japanese company Mitsubishi Electric has presented a new IGBT module for applications in large-scale photovoltaic installations. The company claims that the device helps reduce the number of inverters needed in grid-connected photovoltaic installations, while providing simultaneous high-voltage operation and low power losses. The 2.0kV LV100 device is based on the companys latest IGBT technology and Relaxed Field Cathode (RFC) diodes. It is designed for industrial applications that require an “intermediate” power converter between DC1500 V and 3.3 kV. “More and more power grids using renewable energy require higher and higher power conversion to support DC1500 V,” said Adam Falcsik, senior product manager for power devices at Mitsubishi Electric US. “The latest 2.0kV rated withstand voltage industrial LV100 has been developed for photovoltaic applications where conventional 1.7kV IGBTs are not sufficient for large capacity systems and simplifies the design of DC1500 power converters. V, especially for renewable energy sources.” The manufacturer claims that its LV100 IGBT can convert electricity from solar and storage more efficiently for transmission to the grid, as it reduces the total power consumption of photovoltaic equipment. IGBTs are based on an isolated metal-oxide-semiconductor (MOS) gate structure and have a similar architecture to power MOSFETs . They are mainly based on silicon and are commonly used in all kinds of electronic devices for switching and amplifying electronic signals. IGBTs are voltage controlled like MOSFETs, but also have the switching and output driving characteristics of bipolar transistors. IGBTs are used in inverters, converters, and power supplies in applications for which bipolar transistors and MOSFETs are not ideal. In fact, the former might be too expensive. Mitsubishi said that mass production of the LV100 will start in early 2023.
Country Japan , Eastern Asia
Industry Energy & Power
Entry Date 07 Jul 2022
Source https://www.pv-magazine-latam.com/2022/07/06/mitsubishi-electric-presenta-un-transistor-de-conmutacion-de-potencia-para-la-energia-solar/

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