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Contract Award For Plates Of Single-Crystal Gaas Doped With Sb Up To Charge Carrier Concen...


Contract Award Notice

TRR 20956506
Organization БЕРДЯНСЬКИЙ ДЕРЖАВНИЙ ПЕДАГОГІЧНИЙ УНІВЕРСИТЕТ
Tender No UA-2024-10-02-007760-a
Funded By Self-Funded
Country Ukraine , Eastern Europe
Contract Value 2,327

Work Detail

Contract Award For Plates Of Single-Crystal Gaas Doped With Sb Up To Charge Carrier Concentrations Of 1.8X1023 Cm-3, Plates Polished On Both Sides, Dk 021:2015 14760000-6 Iridium, Gallium, Indium, Thallium And Barium. Semiconductor Materials: Plates Of Single-Crystal Gaas Doped With Sb Up To Concentration Of Charge Carriers 1.8X1023 Cm-3, Plates Polished On Both Sides, Diameter 12.7 Cm; Thickness 0.5 Cm Classification According To Dk 021:2015: 14760000-6 - Iridium, Gallium, Indium, Thallium And Barium

Key Dates

Contract Date 02 Oct 2024

Contact Information

Company Name ФОП Зубко Сергій Миколайович
Contract Value 2,327
Contract Date 02 Oct 2024

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